DocumentCode
1973355
Title
Waveforms and Saturation in GaAs Power MESFETs
Author
Sechi, F. ; Huang, H. ; Perlman, B.
Author_Institution
RCA Laboratories, David Sarnoff Research Center, Princeton, NJ, 08540.
fYear
1978
fDate
4-8 Sept. 1978
Firstpage
473
Lastpage
477
Abstract
Measurements of voltage and current waveforms in power MESFETs have shown that voltage breakdown of the Schottky barrier is responsible for power saturation and consequent nonlinearity of MESFET amplifiers. Also, high peak drain-gate voltages affect device reliability and noise in FET oscillators.
Keywords
Breakdown voltage; Current measurement; Dielectric breakdown; Gallium arsenide; MESFETs; Power amplifiers; Power measurement; Schottky barriers; Voltage measurement; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1978. 8th European
Conference_Location
Paris, France
Type
conf
DOI
10.1109/EUMA.1978.332550
Filename
4131248
Link To Document