• DocumentCode
    197336
  • Title

    Three-photon absorption in hydrogenated amorphous silicon at 1.55µm for all-optical processing

  • Author

    Xin Gai ; Duk-Yong Choi ; Luther-Davies, Barry

  • Author_Institution
    Laser Phys. Center, Australian Nat. Univ., Canberra, ACT, Australia
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Three-photon absorption (3PA) has been observed as the dominant mechanism for nonlinear absorption in wide-bandgap hydrogenated amorphous silicon (a-Si:H) at 1.55μm.
  • Keywords
    elemental semiconductors; hydrogen; multiphoton processes; nonlinear optics; optical information processing; optical materials; silicon; wide band gap semiconductors; 3PA; Si:H; all-optical processing; nonlinear absorption; three-photon absorption; wavelength 1.55 mum; wide-bandgap hydrogenated amorphous silicon; Absorption; Dispersion; Nonlinear optics; Photonic band gap; Photonics; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2014 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6990005
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=197336