DocumentCode :
197336
Title :
Three-photon absorption in hydrogenated amorphous silicon at 1.55µm for all-optical processing
Author :
Xin Gai ; Duk-Yong Choi ; Luther-Davies, Barry
Author_Institution :
Laser Phys. Center, Australian Nat. Univ., Canberra, ACT, Australia
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
1
Lastpage :
2
Abstract :
Three-photon absorption (3PA) has been observed as the dominant mechanism for nonlinear absorption in wide-bandgap hydrogenated amorphous silicon (a-Si:H) at 1.55μm.
Keywords :
elemental semiconductors; hydrogen; multiphoton processes; nonlinear optics; optical information processing; optical materials; silicon; wide band gap semiconductors; 3PA; Si:H; all-optical processing; nonlinear absorption; three-photon absorption; wavelength 1.55 mum; wide-bandgap hydrogenated amorphous silicon; Absorption; Dispersion; Nonlinear optics; Photonic band gap; Photonics; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6990005
Link To Document :
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