DocumentCode :
197342
Title :
Si-based microcavity devices with Ge quantum dots
Author :
Jinsong Xia ; Cheng Zeng ; Yong Zhang ; Yingjie Ma ; Zuimin Jiang ; Yu Jinzhong
Author_Institution :
Wuhan Nat. Lab. for Optoelectron., Huazhong Univ. of Sci. & Technol., Wuhan, China
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
1
Lastpage :
2
Abstract :
Site-controlled single Ge quantum dot was grown on patterned silicon-on-insulator substrate. The single dot was then precisely embedded into a photonic crystal microcavity. Resonant photoluminescence was observed from the single Ge dot in the cavity.
Keywords :
elemental semiconductors; germanium; microcavities; photoluminescence; photonic crystals; semiconductor devices; semiconductor quantum dots; silicon; Si; Si-Ge; Si-based microcavity devices; patterned silicon-on-insulator substrate; photonic crystal microcavity; resonant photoluminescence; site-controlled single quantum dots; Cavity resonators; Microcavities; Photonic crystals; Quantum dot lasers; Quantum dots; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6990008
Link To Document :
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