DocumentCode :
1973450
Title :
Current-injected light emitting device based on Si microdisk with Ge dots
Author :
Xia, Jinsong ; Fukamizu, Seiji ; Usami, Noritaka ; Shiraki, Yasuhiro
Author_Institution :
Adv. Res. Labs., Tokyo City Univ., Tokyo, Japan
fYear :
2009
fDate :
30-3 Aug. 2009
Firstpage :
1
Lastpage :
2
Abstract :
To fabricate a current-injected silicon-based light emitting device, Ge quantum dots were embedded into a microdisk resonator with P-I-N junction for current-injection. Room-temperature electroluminescence was observed from the dots in the microdisk.
Keywords :
electroluminescence; elemental semiconductors; light emitting devices; microdisc lasers; semiconductor quantum dots; silicon; P-I-N junction; Si; current-injected light emitting device; current-injection; microdisk resonator; quantum dots; room-temperature electroluminescence; Electroluminescence; Microcavities; Optical films; Optical materials; Optical resonators; PIN photodiodes; Quantum dots; Scanning electron microscopy; Silicon; Stimulated emission; Ge quantum dots; Si-based light emitting device; optical microcavity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-3829-7
Electronic_ISBN :
978-1-4244-3830-3
Type :
conf
DOI :
10.1109/CLEOPR.2009.5292285
Filename :
5292285
Link To Document :
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