DocumentCode
1973643
Title
MOVPE Growth of Si Planar Doped AIGaAs/lnGaAs Pseudomorphic HEMT Structures
Author
Sakaguchi, H. ; Tsuchiya, T. ; Meguro, T. ; Nagai, H.
Author_Institution
Advanced Research Center, Japan
fYear
1992
fDate
8-11 Jun 1992
Firstpage
125
Lastpage
125
Keywords
Anisotropic magnetoresistance; Doping; Electric breakdown; Electron mobility; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium gallium arsenide; PHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN
0-87942-652-7
Type
conf
DOI
10.1109/MOVPE.1992.664974
Filename
664974
Link To Document