DocumentCode :
1973643
Title :
MOVPE Growth of Si Planar Doped AIGaAs/lnGaAs Pseudomorphic HEMT Structures
Author :
Sakaguchi, H. ; Tsuchiya, T. ; Meguro, T. ; Nagai, H.
Author_Institution :
Advanced Research Center, Japan
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
125
Lastpage :
125
Keywords :
Anisotropic magnetoresistance; Doping; Electric breakdown; Electron mobility; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium gallium arsenide; PHEMTs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664974
Filename :
664974
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1973643
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