DocumentCode :
1973648
Title :
Continuous-wave single-mode electrically -pumped GaSb-based VCSELs at 2.5 μm
Author :
Arafin, Shamsul ; Bachmann, Alexander ; Kashani-Shirazi, Kaveh ; Amann, Markus-Christian
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
fYear :
2009
fDate :
30-3 Aug. 2009
Firstpage :
1
Lastpage :
2
Abstract :
The first 2.5 mum electrically-pumped (Ith = 8 mA) single-mode (SMSR > 27 dB) GaSb-based vertical-cavity surface-emitting lasers are presented. The devices that are based on the buried tunnel junction structure operate continuous-wave up to 20degC.
Keywords :
III-V semiconductors; gallium compounds; optical pumping; surface emitting lasers; GaSb; VCSEL; buried tunnel junction structure; continuous-wave single-mode laser; electrically pumped laser; vertical cavity surface emitting lasers; wavelength 2.5 mum; Absorption; Distributed Bragg reflectors; Gas lasers; Laser modes; Molecular beam epitaxial growth; Reflectivity; Surface emitting lasers; Threshold current; Threshold voltage; Vertical cavity surface emitting lasers; TDLAS; VCSEL; buried tunnel junction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-3829-7
Electronic_ISBN :
978-1-4244-3830-3
Type :
conf
DOI :
10.1109/CLEOPR.2009.5292295
Filename :
5292295
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1973648
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