Linearity Assessment in DMG ISEGaS MOSFET for RFIC Design

RF circuit application requires transistors with low intermodulation distortion and thus, linearity analysis is desired to optimize device structure and circuit design. In this work, RF linearity of Dual Material Gate Insulated Shallow Extension Gate Stack (DMG ISEGaS) is investigated using ATLAS-2D: device simulation software and is compared with its Single Material Gate (SMG) counterpart. The work describes the bias point selection that enables RFICs with higher efficiency and better linearity performance. VIP2, VIP3 Figure of Merits (FOMs) and higher order transconductance; gm and gm are studied and superiority of DMG ISEGaS, in terms of linearity, over its SMG counterpart is presented.