RF Performance of Double Heterojunction High Electron Mobility Transistor with Various Lower/Upper Planar Doping Ratio Designs On SPST Switchs Application

The microwave noise, power, and linearity characteristics of pseudomorphic high electron mobility transistors (pHEMTs) with various lower/upper planar zeta-doping ratios were evaluated and studied systematically. Compared to single zeta-doping pHEMT, double zeta-doping design provides high current density and linearity. However, the microwave performance of double zeta-doping pHEMTs with various lower/upper zeta-doping ratio designs is still short of comprehensive investigations.. In this study, using double zeta-doping pHEMTs with various lower/upper zeta-doping ratio designs might be introduced into the switches application. Because higher upper zeta-doping design is beneficial for improving the device current density, transconductance, output power, and power added efficiency, but this design also scarified the flatness of transconductance distribution resulting in a degradation of linearity.