مرکز منطقه ای اطلاع رساني علوم و فناوري - The Elimination of H2O and SiH4 in AsH3

DocumentCode :

1974023

Title :

The Elimination of H₂O and SiH₄ in AsH₃

Author :

Ikeda, Takuya ; Noda, Hiroshi ; Matsumoto, Koh

Author_Institution :

Fine-gas manufacturing Division, NIPPON SANSO Corp., Japan

fYear :

1992

fDate :

8-11 Jun 1992

Firstpage :

128

Lastpage :

129

Keywords :

Aluminum; Ash; Epitaxial growth; Epitaxial layers; Gallium arsenide; Impurities; Laboratories; Purification; Surface cleaning; Surface treatment;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference

Print_ISBN :

0-87942-652-7

Type :

conf

DOI :

10.1109/MOVPE.1992.664976

Filename :

664976

Link To Document :