DocumentCode
1974115
Title
High Performance GaAs Schottky Barrier Diodes using a Cantilevered Metal Contact
Author
Boccon-Gibod, Dominique ; Harrop, Peter
fYear
1978
fDate
4-8 Sept. 1978
Firstpage
696
Lastpage
700
Abstract
A planar Schottky diode of original structure has been developed using a suspended contact between the active diode area and the ohmic contact to increase the device cut-off frequency and make a low cost reliable device. Self-alignment techniques were used to define the active diode area. Cut-off frequencies in excess of 2 000 GHz have been measured and series resistances around 1.3 ohms. The diodes have been used in waveguide and microstrip mixer structures and conversion loss measurements will be presented.
Keywords
Costs; Cutoff frequency; Electrical resistance measurement; Frequency measurement; Gallium arsenide; Microstrip; Mixers; Ohmic contacts; Schottky barriers; Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1978. 8th European
Conference_Location
Paris, France
Type
conf
DOI
10.1109/EUMA.1978.332611
Filename
4131287
Link To Document