DocumentCode
1974209
Title
The Effects of Substrate Disorientation on Silicon Doping Efficiency in OMVPE Grown GaAs
Author
Thompson, Alan G.
Author_Institution
High Technology Center, Boeing Defense and Space Group, Seattle, WA
fYear
1992
fDate
8-11 Jun 1992
Firstpage
130
Lastpage
131
Keywords
Doping; Epitaxial growth; Gallium arsenide; Hall effect; Semiconductor process modeling; Silicon; Space technology; Substrates; Surface morphology; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN
0-87942-652-7
Type
conf
DOI
10.1109/MOVPE.1992.664977
Filename
664977
Link To Document