High Efficiency Indium Phosphide Oscillators for Pulsed Applications

High efficiency indium phosphide oscillators have been developed for pulsed applications in the 12 to 18 GHz frequency range. The development of low thermal resistance structures has enabled long pulse or high duty factor operation to be readily achieved. Individual devices have given peak powers of low at efficiencies of up to 17% and peak powers of 40W at efficiencies of greater than 10% have been obtained from multiple diode arrays. A cavity stabilised two diode array has given output powers of low at 10% efficiency with less than 0.5 MHz chirp for 1¿sec pulses. CW priming has been used to obtain minimal delay and jitter of the leading edge of the rf pulse and intraspectral line noise of ¿80 dbc/Hz.