Title :
PHEMT SP6T ICs for Quadband GSM Handset Applications
Author :
Wu, Janne-Wha ; Chen, Sheng-Wen ; Huang, Chiun-Chau ; Tang, Ching-Wen ; Li, Jeng-Hung ; Tsai, Chia-Wei
Author_Institution :
Nat. Chung Cheng Univ., Chiayi
Abstract :
An integrated circuit of quad-band GSM single pole six thru (SP6T) switch is designed with an InGaAs/GaAs PHEMT technology. It had successfully demonstrated as play for all quad-band operations (GSM850, EGSM900, DCS1800, PCS1900). Both requirements of low insertion loss (less than 1 dB) and high isolation are achieved at the same time. Some of termination methods were used to improve the isolation between Tx and Rx.
Keywords :
HEMT integrated circuits; III-V semiconductors; cellular radio; electronic switching systems; field effect transistor switches; gallium arsenide; indium compounds; integrated circuit design; mobile handsets; InGaAs-GaAs; PHEMT SP6T IC; insertion loss; quadband GSM handset application; single pole six thru switch design; GSM; Gallium arsenide; Indium gallium arsenide; Insertion loss; Integrated circuit technology; Isolation technology; PHEMTs; Switches; Switching circuits; Telephone sets; GSM handset; PHEMT; RF Switch;
Conference_Titel :
Microwave Conference, 2007. APMC 2007. Asia-Pacific
Conference_Location :
Bangkok
Print_ISBN :
978-1-4244-0748-4
Electronic_ISBN :
978-1-4244-0749-1
DOI :
10.1109/APMC.2007.4554719
