DocumentCode
1974583
Title
Effect of Substrate Misorientations on the Optical Properties and Doping Characteristics of MOVPE Grown Ga0.5In0.5P and (Al0.5Ga0.5)0.5In0.5P
Author
Jou, Ming-Jiunn ; Lin, Jyh-Feng ; Chen, Chin-Yuan ; Lee, Biing-Jye
Author_Institution
Research Institute of Electrical Engineering, National Tsing Hua University, Taiwan
fYear
1992
fDate
8-11 Jun 1992
Firstpage
134
Lastpage
135
Keywords
Doping; Epitaxial growth; Epitaxial layers; Gallium arsenide; Laboratories; Optical materials; Optical surface waves; Substrates; Surface morphology; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN
0-87942-652-7
Type
conf
DOI
10.1109/MOVPE.1992.664979
Filename
664979
Link To Document