• DocumentCode
    1974631
  • Title

    Microwave Bipolar Transistor Technology - Present and Prospects

  • Author

    Snapp, Craig P.

  • Author_Institution
    Hewlett-Packard Company, Microwave Semiconductor Division, 350 West Trimble Road, San Jose, California 95131 USA
  • fYear
    1979
  • fDate
    17-20 Sept. 1979
  • Firstpage
    3
  • Lastpage
    12
  • Abstract
    This paper reviews the present status and future prospects for Si bipolar transistors and monolithic integrated circuits designed for applications at frequencies above 500MHz. The technological limitations on performance are discussed as well as the fundamental strengths and basic terminal characteristics which insure that bipolar transistors and integrated circuits will continue to offer the most cost-effective solutions to many microwave system design problems in the coming decade of the 1980´s.
  • Keywords
    Bipolar integrated circuits; Bipolar transistors; Delay effects; Integrated circuit technology; MOSFETs; Microwave devices; Microwave integrated circuits; Microwave technology; Microwave transistors; Power transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1979. 9th European
  • Conference_Location
    Brighton, UK
  • Type

    conf

  • DOI
    10.1109/EUMA.1979.332672
  • Filename
    4131314