DocumentCode
1974631
Title
Microwave Bipolar Transistor Technology - Present and Prospects
Author
Snapp, Craig P.
Author_Institution
Hewlett-Packard Company, Microwave Semiconductor Division, 350 West Trimble Road, San Jose, California 95131 USA
fYear
1979
fDate
17-20 Sept. 1979
Firstpage
3
Lastpage
12
Abstract
This paper reviews the present status and future prospects for Si bipolar transistors and monolithic integrated circuits designed for applications at frequencies above 500MHz. The technological limitations on performance are discussed as well as the fundamental strengths and basic terminal characteristics which insure that bipolar transistors and integrated circuits will continue to offer the most cost-effective solutions to many microwave system design problems in the coming decade of the 1980´s.
Keywords
Bipolar integrated circuits; Bipolar transistors; Delay effects; Integrated circuit technology; MOSFETs; Microwave devices; Microwave integrated circuits; Microwave technology; Microwave transistors; Power transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1979. 9th European
Conference_Location
Brighton, UK
Type
conf
DOI
10.1109/EUMA.1979.332672
Filename
4131314
Link To Document