Title :
AIGaAs/GaAs Heterojunction Bipolar Transistors with C-Doped Base Grown by AP-MOVPE
Author :
Tanaka, S. ; Ito, M. ; Ikeda, M. ; Kikuta, T.
Author_Institution :
Yokohama R&D Laboratories, The Furukawa Electric Co., LTD., Japan
Keywords :
Carbon dioxide; Electrical resistance measurement; Gallium arsenide; Gases; Geometry; Heterojunction bipolar transistors; Inductors; Laboratories; Molecular beam epitaxial growth; Research and development;
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
DOI :
10.1109/MOVPE.1992.664980