DocumentCode :
1974730
Title :
AIGaAs/GaAs Heterojunction Bipolar Transistors with C-Doped Base Grown by AP-MOVPE
Author :
Tanaka, S. ; Ito, M. ; Ikeda, M. ; Kikuta, T.
Author_Institution :
Yokohama R&D Laboratories, The Furukawa Electric Co., LTD., Japan
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
136
Lastpage :
137
Keywords :
Carbon dioxide; Electrical resistance measurement; Gallium arsenide; Gases; Geometry; Heterojunction bipolar transistors; Inductors; Laboratories; Molecular beam epitaxial growth; Research and development;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664980
Filename :
664980
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1974730
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