500W Long-Pulse High Efficiency UHF BJT Transistor for Radar Applications

Author

Shi, Tiefeng ; Chang, Jerry ; Leverich, Lyle ; Leader, Charlie

Author_Institution

Power Products Group, Microsemi Corp., Santa Clara, CA

fYear

2007

fDate

11-14 Dec. 2007

Firstpage

1

Lastpage

4

Abstract

A 500 W very long-pulse high efficiency BJT power transistor is presented, which operates at 6 mS pulse width, 20% duty cycle and 36 V supply voltage. The output power exceeds 500 Watts; the efficiency is higher than 60%; and power gain is greater than 11dB across 400 MHz to 450 MHz. The die layout, internal impedance matching technique and external impedance matching of the test fixture design is also described. The thermal resistance is 0.25C/W. The junction temperature remains below 150 C at the heat sink temperature of 70 C. This transistor uses state-of-the-art silicon BJT technology in a common emitter configuration and class C operation. This combination of high power, long-pulse, and high efficiency makes these devices ideally suited for transmitter designs in UHF radar systems.

Keywords

UHF transistors; bipolar transistors; radar; UHF BJT transistor; heat sink temperature; internal impedance matching technique; junction temperature; long-pulse high efficiency; power 400 W; radar applications; state-of-the-art silicon BJT technology; thermal resistance; transmitter designs; voltage 36 V; Fixtures; Impedance matching; Power generation; Power transistors; Radar applications; Space vector pulse width modulation; Temperature; Testing; Thermal resistance; Voltage; BJT; High-Power Transistor; Radar applications; UHF;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2007. APMC 2007. Asia-Pacific

Conference_Location

Bangkok

Print_ISBN

978-1-4244-0748-4

Electronic_ISBN

978-1-4244-0749-1

Type

conf

DOI

10.1109/APMC.2007.4554735

Filename

4554735