DocumentCode
1974896
Title
3D TCAD based approach for the evaluation of nanoscale devices during ESD failure
Author
Shrivastava, Mayank ; Gossner, Harald ; Baghini, Maryam Shojaei ; Rao, Valipe Ramgopal
Author_Institution
Dept. of Electr. Eng., Indian Inst. of Technol.-Bombay, Mumbai, India
fYear
2010
fDate
22-23 Nov. 2010
Firstpage
268
Lastpage
271
Abstract
This paper demonstrates a 3D TCAD based approach towards the evaluation and pre-silicon development of nanoscale devices for advanced ESD protection concepts. Impact of various physical models and parameters on the accuracy of predicted ESD figures of merit are discussed. Moreover, various devices options, have been evaluated from 3D TCAD simulations.
Keywords
electrostatic discharge; nanoelectronics; technology CAD (electronics); 3D TCAD simulation; ESD failure; nanoscale device evaluation; pre-silicon development; Current density; Electrostatic discharge; Predictive models; Solid modeling; Stress; Temperature; Three dimensional displays; ESD; It2; moving filaments; on-state spreading; space charge modulation; thermal failure;
fLanguage
English
Publisher
ieee
Conference_Titel
SoC Design Conference (ISOCC), 2010 International
Conference_Location
Seoul
Print_ISBN
978-1-4244-8633-5
Type
conf
DOI
10.1109/SOCDC.2010.5682919
Filename
5682919
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