DocumentCode
1974967
Title
On the Transient behavior of various drain extended MOS devices under the ESD stress condition
Author
Shrivastava, Mayank ; Gossner, Harald ; Baghini, Maryam Shojaei ; Rao, V. Ramgopal
Author_Institution
Dept. of Electr. Eng., Indian Inst. of Technol.-Bombay, Mumbai, India
fYear
2010
fDate
22-23 Nov. 2010
Firstpage
264
Lastpage
267
Abstract
This paper presents ESD evaluation of various nanoscale drain extended MOS devices. Current and time evolution of current filaments formed under the ESD stress conditions are investigated. A complete picture of device´s behavior at the onset of space charge modulation and the evolution of current filamentation is discussed based on Transient Interferometric mapping studies.
Keywords
CMOS integrated circuits; ULSI; electrostatic discharge; transient analysis; CMOS process; ESD stress condition; current filamentation; drain extended ULSI devices; nanoscale drain extended MOS devices; space charge modulation; transient behavior; transient interferometric mapping; Electrostatic discharge; Heating; Junctions; MOS devices; Modulation; Space charge; Transient analysis; Drain extended MOS; ESD; It2; TIM; base push out; current filament; space charge modulation;
fLanguage
English
Publisher
ieee
Conference_Titel
SoC Design Conference (ISOCC), 2010 International
Conference_Location
Seoul
Print_ISBN
978-1-4244-8633-5
Type
conf
DOI
10.1109/SOCDC.2010.5682922
Filename
5682922
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