Applications of TMR devices in solid state circuits and systems

Author

Chen, Yiran ; Li, Hai ; Wang, Xiaobin ; Park, Jongsun

Author_Institution

Univ. of Pittsburgh, Pittsburgh, PA, USA

fYear

2010

fDate

22-23 Nov. 2010

Firstpage

252

Lastpage

255

Abstract

Spintronic devices have recently attracted significant attentions in solid state circuit society as a promising device in the applications of nonvolatile memory and emerging circuit design, i.e., memristor-based system. In this paper, we introduce Tunneling magnetoresistance (TMR) device - a popular spintronic device structure and its applications in 1) multi-level cell memory design; 2) memristive devices (memristor); and 3) a special circuit design example - nondestructive self-reference sensing technology.

Keywords

magnetic storage; magnetoelectronics; magnetoresistive devices; memristors; network synthesis; random-access storage; tunnelling magnetoresistance; TMR devices; circuit design; memristor-based system; multilevel cell memory design; nondestructive self-reference sensing technology; nonvolatile memory; solid state circuits; spintronic devices; tunneling magnetoresistance device; Magnetic tunneling; Magnetoelectronics; Memristors; Resistance; Sensors; Switches; Tunneling magnetoresistance; magnetic memory; magnetic tunneling junction; memristor; spin-transfer torque; spintronic memory;

fLanguage

English

Publisher

ieee

Conference_Titel

SoC Design Conference (ISOCC), 2010 International

Conference_Location

Seoul

Print_ISBN

978-1-4244-8633-5

Type

conf

DOI

10.1109/SOCDC.2010.5682923

Filename

5682923