DocumentCode
1975162
Title
Development of high power press-pack IGBT and its applications
Author
Uchida, Yoshiyuki ; Seki, Yasukazu ; Takahashi, Yoshikazu ; Ichijoh, Masami
Author_Institution
Electron. Co., Fuji Electr. Co. Ltd., Tokyo, Japan
Volume
1
fYear
2000
fDate
2000
Firstpage
125
Abstract
Press-pack IGBT has been developed in recent years as a superior high power IGBT device to conventional IGBT module in reliability and performance. This type of IGBT is replacing GTO or thyristor in such applications as traction, power transmission and industrial motor drive because of its excellent advantages such as high performance, high reliability, compactness due to the both-sided cooling, rupture free feature, and so forth. This paper reviews the performance and structure of 2.5 kV and 4.5 kV press-pack IGBT´s and their major applications
Keywords
insulated gate bipolar transistors; 2.5 kV; 4.5 kV; high power device; press-pack IGBT; Cooling; Insulated gate bipolar transistors; Metalworking machines; Motor drives; Multichip modules; Packaging; Power system reliability; Power transmission; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-5235-1
Type
conf
DOI
10.1109/ICMEL.2000.840538
Filename
840538
Link To Document