DocumentCode :
1975400
Title :
12 GHz Variable-Gain Amplifier with Dual-Gate GaAs FET for Satellite Use
Author :
Ohm, G. ; Czech, J.
fYear :
1979
fDate :
17-20 Sept. 1979
Firstpage :
298
Lastpage :
302
Abstract :
The performance of a single-stage variable-gain amplifier at 12 GHz is described, including intermodulation behaviour. The amplifier has a gain control range of 26 dB and a gain flatness of ± 0.5 dB over the 800 MHz bandwidth. Some fundamental features of the dual-gate FET such as noise, phase, and temperature behaviour are shown. The effect of second gate termination is studied by computer simulation, based on three-port s-parameters which have been measured up to 18 GHz.
Keywords :
Dynamic range; Gain control; Gallium arsenide; Microwave FETs; Reflection; Satellites; Scattering parameters; Tellurium; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1979. 9th European
Conference_Location :
Brighton, UK
Type :
conf
DOI :
10.1109/EUMA.1979.332717
Filename :
4131359
Link To Document :
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