DocumentCode
1975468
Title
The Conversion Gain and Stability of MESFET Gate Mixers
Author
Begemann, Günther ; Hecht, Andreas
Author_Institution
Institut fÿr Hochfrequenztechnik, TU Braunschweig, Postfach 3329, D-3300 Braunschweig
fYear
1979
fDate
17-20 Sept. 1979
Firstpage
316
Lastpage
320
Abstract
The conversion gain of MESFET gate mixers has been calculated based on the directly measurable S- und Y-parameters, respectively. The analytical results show that parasitic mixing products can be neglected and that the reactions can be suppressed by shorting the IF at the gate and the signal, image, and sum frequency at the drain. The gain which has been measured at a 3.8 GHZ microstrip mixer agrees closely with the one which has been calculated. For a stable and low noise operation it is essential to short all the mixing frequencies except the IF at the drain and the signal at the gate.
Keywords
FETs; Frequency; Gain measurement; Impedance; MESFETs; Microstrip; Mixers; Scattering parameters; Stability; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1979. 9th European
Conference_Location
Brighton, UK
Type
conf
DOI
10.1109/EUMA.1979.332721
Filename
4131363
Link To Document