• DocumentCode
    1975525
  • Title

    Study on Reliability of Low Noise GaAs MESFETs

  • Author

    Suzuki, T. ; Otsubo, M. ; Ishii, T. ; Shirahata, K.

  • Author_Institution
    Semiconductor Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664, Japan
  • fYear
    1979
  • fDate
    17-20 Sept. 1979
  • Firstpage
    331
  • Lastpage
    335
  • Abstract
    Analysis is made with regard to the failure mode of GaAs FETs and cause of the failure is investigated. It is fundamental for improving reliability of GaAs FETs to suppress the localized high electric field and the gate metal migration. The deep gate recess and the thick gate structure and the unsymmetric configuration of the gate location between source and drain are introduced. DC surge pulse capability and the RF input power capability of the improved GaAs FETs are 2 times and more than 5 times, respectively compared with conventional GaAs FETs.
  • Keywords
    Circuits; Electric breakdown; FETs; Failure analysis; Gallium arsenide; MESFETs; Radio frequency; Surges; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1979. 9th European
  • Conference_Location
    Brighton, UK
  • Type

    conf

  • DOI
    10.1109/EUMA.1979.332724
  • Filename
    4131366
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1975525