Title :
High Purity LP-MOVPE Process of Ill/V Compounds Using an Inert Carrier Gas with Drastically Reduced Hazards
Author :
Hergeth, J. ; Lengeling, G. ; Schmitz, D. ; Jürgensen, H.
Author_Institution :
AIXTRON Semiconductor Technologies Aachen, Germany
Keywords :
Atmosphere; Epitaxial growth; Epitaxial layers; Explosives; Gallium arsenide; Gases; Indium phosphide; Lattices; Nitrogen; Substrates;
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
DOI :
10.1109/MOVPE.1992.664984
