DocumentCode
1975735
Title
Development of semiconductor switches (SiC-BGSIT) applied for DC circuit breakers
Author
Tanaka, Yuichi ; Takatsuka, Akio ; Yatsuo, Tsutomu ; Sato, Yuuki ; Ohashi, H.
Author_Institution
Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
fYear
2013
fDate
20-23 Oct. 2013
Firstpage
1
Lastpage
4
Abstract
In this paper, we introduce silicon carbide (SiC) buried gate static induction transistors (BGSITs) which can be applied for circuit breakers in DC distribution systems. SiC-BGSITs have excellent electrical properties such as low on-resistance, first switching speed and robustness. These properties are indispensable for the realization of semiconductor circuit breakers in DC distribution systems and cannot be achieved by any other semiconductor materials.
Keywords
circuit breakers; distribution networks; semiconductor switches; silicon compounds; transistors; wide band gap semiconductors; BGSIT; DC circuit breaker; DC distribution system; SiC; buried gate static induction transistor; semiconductor circuit breaker; semiconductor material; semiconductor switch; Diamonds; Gallium arsenide; Gallium nitride; Robustness; Silicon; Silicon carbide; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Electric Power Equipment - Switching Technology (ICEPE-ST), 2013 2nd International Conference on
Conference_Location
Matsue
Type
conf
DOI
10.1109/ICEPE-ST.2013.6804323
Filename
6804323
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