DocumentCode

1975819

Title

Uniform Growth of InSb on GaAs in a Rotating Disk Reactor by LPMOVPE

Author

McKee, M.A. ; Yoo, B.S. ; Stall, R.A.

Author_Institution

EMCORE Corporation, Somerset, N.J.

fYear

1992

fDate

8-11 Jun 1992

Firstpage

144

Lastpage

144

Keywords

Epitaxial layers; Gallium arsenide; Hall effect; Inductors; Temperature; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference

Print_ISBN

0-87942-652-7

Type

conf

DOI

10.1109/MOVPE.1992.664985

Filename

664985