Photosensitivity increase of vapor-phase graded band gap CdHgTe by introduction to substrate of an isovalent impurity Mn,Zn

Author

Vlasenko, O.I. ; Babentsov, V.M. ; Vlasenko, Z.K. ; Kurilo, I.V. ; Rudyi, I.O.

Author_Institution

Inst. of Semicond. Phys., Acad of Sci., Ukraine

Volume

1

fYear

2000

fDate

2000

Firstpage

293

Abstract

By using the method of VPE CdMnTe-CdMnHgTe, CdZnTe-CdZnHgTe heterocompositions were fabricated. The increase of their photo-sensitivity in comparison with the CdTe-CdHgTe structure is explained by removal of deformation stresses due to the introduction of an isovalent component (Mn, Zn) of smaller size and due to reduction of recombination activity of non-equilibrium charge carriers in the film. The photo-sensitivity increase in the field of the metallurgical boundary in the CdMnTe-CdMnHgTe structure under increase of the Mn content up to γ⩽0.08 in comparison to the CdZnTe-CdZnHgTe structure is connected with the more precise matching of the lattices of the initial materials. On the basis of comparisons of experimental and calculated profiles of the component distribution, the values of diffusion coefficients in the substrate and growing film were obtained

Keywords

II-VI semiconductors; cadmium compounds; chemical interdiffusion; electron-hole recombination; energy gap; functionally graded materials; interface structure; internal stresses; manganese compounds; mercury compounds; photoconductivity; semiconductor growth; semiconductor heterojunctions; semimagnetic semiconductors; vapour phase epitaxial growth; zinc compounds; CdMnTe-CdMnHgTe; CdZnTe-CdZnHgTe; Mn; VPE; Zn; deformation stresses; diffusion coefficients; heterocompositions; isovalent impurity; nonequilibrium charge carriers; photo-sensitivity; photosensitivity; recombination activity; substrate; vapor-phase graded band gap CdHgTe; Charge carriers; Electron beams; Impurities; Inorganic materials; Lattices; Mercury (metals); Photonic band gap; Stress; Substrates; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2000. Proceedings. 2000 22nd International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-5235-1

Type

conf

DOI

10.1109/ICMEL.2000.840577

Filename

840577