How forward body bias helps to reduce ground bouncing noise and silicon area in MTCMOS circuits: Divulging the basic mechanism

Author

Jiao, Hailong ; Kursun, Volkan

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

fYear

2010

fDate

22-23 Nov. 2010

Firstpage

9

Lastpage

12

Abstract

Forward body bias is an effective technique for reducing mode transition noise and area overhead associated with Multi-threshold CMOS (MTCMOS) circuits. In this paper, the principal mechanism of noise reduction and silicon area compaction in forward-body-biased MTCMOS circuits is revealed and discussed in detail. Tradeoffs between area and leakage power consumption in forward-body-biased MTCMOS circuits are evaluated. Design guidelines are provided for optimum sizing of noise-control transistor and appropriate selection of body bias voltage to fully utilize the benefits of the forward body bias technique.

Keywords

CMOS integrated circuits; design engineering; leakage currents; area overhead; body bias voltage; design guidelines; forward body bias; forward-body-biased MTCMOS circuits; ground bouncing noise; leakage power consumption; mode transition noise; multithreshold CMOS circuits; noise reduction; noise-control transistor; silicon area compaction; CMOS integrated circuits; CMOS technology; Compaction; Noise; Power demand; Silicon; Transistors; Reactivation noise; dominant noise component; leakage power consumption; optimum transistor size; overall electrical quality;

fLanguage

English

Publisher

ieee

Conference_Titel

SoC Design Conference (ISOCC), 2010 International

Conference_Location

Seoul

Print_ISBN

978-1-4244-8633-5

Type

conf

DOI

10.1109/SOCDC.2010.5682985

Filename

5682985