• DocumentCode
    1976409
  • Title

    Characterization of CuInSe2 thin films prepared by ion-beam sputtering

  • Author

    Zheng, Zhuang-Hao ; Fan, Ping ; Zhang, Dong-Ping ; Cai, Xing-Min ; Liang, Guang-Xing

  • Author_Institution
    Inst. of Thin Film Phys. & Applic., Shenzhen Univ., Shenzhen, China
  • fYear
    2009
  • fDate
    30-3 Aug. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    CuInSe2 (CIS) thin films were prepared by ion-beam sputtering at different substrate temperatures. The films prepared at room temperature were annealed at different temperatures. Films annealed at appropriate temperatures are dense, uniform and of single-phase.
  • Keywords
    annealing; copper compounds; indium compounds; semiconductor growth; semiconductor thin films; sputter deposition; sputtered coatings; ternary semiconductors; CIS thin films; CuInSe2; annealing; ion-beam sputtering; single-phase thin films; substrate temperature; temperature 293 K to 298 K; Annealing; Computational Intelligence Society; Copper; Optical films; Photovoltaic cells; Sputtering; Substrates; Surface morphology; Temperature; X-ray scattering; Annealing; CIS; Ion-beam sputtering; Substrate temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-3829-7
  • Electronic_ISBN
    978-1-4244-3830-3
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2009.5292427
  • Filename
    5292427
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1976409