• DocumentCode
    1976412
  • Title

    Electrothermal investigation on through silicon multi-walled carbon nanotube via interconnects

  • Author

    Cui, Jiang-Peng ; Xu, Xiao-Long ; Yin, Wen-Yan

  • Author_Institution
    Centre for Opt. & Electromagn. Res., Zhejiang Univ., Hangzhou, China
  • fYear
    2010
  • fDate
    7-9 Dec. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents hybrid analysis of through silicon multi-walled carbon nanotube vias. A set of equivalent lumped-element circuit models for two through silicon multi-walled carbon nanotube via (TS-MWCNTV) interconnects are proposed, with quantum effect treated appropriately. The methods for characterizing all frequency- and temperature-dependent RLCG parameters of a couple of TS-MWCNTVs are then given, including their effective capacitance, effective conductance, and characteristic impedance. Further, hybrid effects of frequency, as well as temperature on the conductance of open structure is examined. Also, the time delay of the TS-MWCNTV is studied.
  • Keywords
    carbon nanotubes; elemental semiconductors; integrated circuit interconnections; integrated circuit modelling; silicon; three-dimensional integrated circuits; C; Si; TS-MWCNTV; characteristic impedance; effective capacitance; effective conductance; frequency-dependent RLCG parameters; lumped-element circuit models; quantum effect; temperature-dependent RLCG parameters; through silicon multiwalled carbon nanotube via interconnect; Carbon nanotubes; Integrated circuit interconnections; Integrated circuit modeling; Quantum capacitance; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Design of Advanced Packaging & Systems Symposium (EDAPS), 2010 IEEE
  • Conference_Location
    Singapore
  • ISSN
    2151-1225
  • Print_ISBN
    978-1-4244-9068-4
  • Electronic_ISBN
    2151-1225
  • Type

    conf

  • DOI
    10.1109/EDAPS.2010.5682991
  • Filename
    5682991