DocumentCode
1976412
Title
Electrothermal investigation on through silicon multi-walled carbon nanotube via interconnects
Author
Cui, Jiang-Peng ; Xu, Xiao-Long ; Yin, Wen-Yan
Author_Institution
Centre for Opt. & Electromagn. Res., Zhejiang Univ., Hangzhou, China
fYear
2010
fDate
7-9 Dec. 2010
Firstpage
1
Lastpage
4
Abstract
This paper presents hybrid analysis of through silicon multi-walled carbon nanotube vias. A set of equivalent lumped-element circuit models for two through silicon multi-walled carbon nanotube via (TS-MWCNTV) interconnects are proposed, with quantum effect treated appropriately. The methods for characterizing all frequency- and temperature-dependent RLCG parameters of a couple of TS-MWCNTVs are then given, including their effective capacitance, effective conductance, and characteristic impedance. Further, hybrid effects of frequency, as well as temperature on the conductance of open structure is examined. Also, the time delay of the TS-MWCNTV is studied.
Keywords
carbon nanotubes; elemental semiconductors; integrated circuit interconnections; integrated circuit modelling; silicon; three-dimensional integrated circuits; C; Si; TS-MWCNTV; characteristic impedance; effective capacitance; effective conductance; frequency-dependent RLCG parameters; lumped-element circuit models; quantum effect; temperature-dependent RLCG parameters; through silicon multiwalled carbon nanotube via interconnect; Carbon nanotubes; Integrated circuit interconnections; Integrated circuit modeling; Quantum capacitance; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Design of Advanced Packaging & Systems Symposium (EDAPS), 2010 IEEE
Conference_Location
Singapore
ISSN
2151-1225
Print_ISBN
978-1-4244-9068-4
Electronic_ISBN
2151-1225
Type
conf
DOI
10.1109/EDAPS.2010.5682991
Filename
5682991
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