Buffer layer effects on properties of ZnTe for terahertz device application

Author

Guo, Qixin ; Nakao, Yuki ; Kadoguchi, Yoshiki ; Ding, Yaliu ; Tanaka, Tooru ; Nishio, Mitsuhiro ; Tani, Masahiko ; Hangyo, Masanori

Author_Institution

Synchrotron Light Applic. Center, Saga Univ., Saga, Japan

fYear

2009

fDate

30-3 Aug. 2009

Firstpage

1

Lastpage

2

Abstract

The influence of ZnTe low-temperature buffer layer on crystal quality and surface morphology of ZnTe layers grown on (0001) sapphire substrates by metalorganic vapor phase epitaxy was investigated. It was found that both the crystal quality and surface morphology of the ZnTe layers can be improved by introducing the buffer layer with a suitable thickness between the epilayer and the substrate.

Keywords

II-VI semiconductors; MOCVD; MOCVD coatings; buffer layers; semiconductor epitaxial layers; semiconductor growth; surface morphology; vapour phase epitaxial growth; zinc compounds; (0001) sapphire substrate; Al₂O₃; MOVPE; ZnTe; buffer layer effects; crystal quality; metalorganic vapor phase epitaxy; surface morphology; terahertz device application; zinc telluride epilayer; Buffer layers; Crystals; Epitaxial growth; Epitaxial layers; Lattices; Submillimeter wave devices; Substrates; Surface morphology; Temperature; Zinc compounds; MOVPE; ZnTe; buffer layer; crystal quality;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-3829-7

Electronic_ISBN

978-1-4244-3830-3

Type

conf

DOI

10.1109/CLEOPR.2009.5292429

Filename

5292429