• DocumentCode
    1976795
  • Title

    Experimental study of high-speed hybrid circuit breaker used in fast isolation of faulty power

  • Author

    Enyuan Dong ; Chen Yushuo ; Yongxing Wang ; Jinhu Zhao ; Jiyan Zou

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Dalian Univ. of Technol., Dalian, China
  • fYear
    2013
  • fDate
    20-23 Oct. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A novel hybrid circuit breaker using IGBT and high-speed repulsion mechanism was given in this paper, which can isolate the failed power supply within 2ms. The high-speed electromagnetic repulsion mechanism is connected in parallel with IGBT, and the device is especially suitable for isolating or switching fault power in low voltage area. It has both advantages of traditional mechanical switches and power electronic switches, like large conduction flow, fast isolating and less energy consumption. The key of the study locates at the control sequence between mechanical switch and IGBT, as well as the design of the buffer circuit in the case of resistive or inductive load. Moreover, the operating characteristics of mechanical switch should meet the demands of fast switching. A large number of experiments have been carried out on prototype under the guidance of simulation in MATLAB. The breaking waves of the hybrid switch are analyzed under resistive and inductive load. The results show that the switch performed quickly and reliably, and the buffer circuit can effectively suppress the overvoltage upon the switch.
  • Keywords
    circuit breakers; power consumption; power semiconductor switches; power supply circuits; IGBT; MATLAB; buffer circuit; conduction flow; energy consumption; failed power supply; high-speed electromagnetic repulsion; high-speed hybrid circuit breaker; high-speed repulsion mechanism; inductive load; isolating fault power; low voltage area; mechanical switches; power electronic switches; resistive load; switching fault power; Contacts; Current measurement; Dispersion; Insulated gate bipolar transistors; Semiconductor device measurement; Switches; Time factors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electric Power Equipment - Switching Technology (ICEPE-ST), 2013 2nd International Conference on
  • Conference_Location
    Matsue
  • Type

    conf

  • DOI
    10.1109/ICEPE-ST.2013.6804364
  • Filename
    6804364