The Effects of Oxygen Impurity in TMA on AIGaAs Layers Grown by MOVPE

Author

Hata, Masaharu ; Takata, H. ; Yako, T. ; Fukuhara, N. ; Maeda, T. ; Uemura, Yuuki

Author_Institution

Tsukuba Research Laboratory, Japan

fYear

1992

fDate

8-11 Jun 1992

Firstpage

151

Lastpage

151

Keywords

Artificial intelligence; Atomic layer deposition; Atomic measurements; Epitaxial growth; Epitaxial layers; Impurities; Oxygen;

fLanguage

English

Publisher

ieee

Conference_Titel

Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference

Print_ISBN

0-87942-652-7

Type

DOI

10.1109/MOVPE.1992.664989

Filename

664989

Link To Document