DocumentCode
1976965
Title
Wideband transitions for wafer level MEMS packages
Author
Lim, Ying Ying ; Yu, Aibin ; Chen, Bangtao
Author_Institution
Inst. of Microelectron., A*STAR (Agency for Sci., Technol., & Res.), Singapore, Singapore
fYear
2010
fDate
7-9 Dec. 2010
Firstpage
1
Lastpage
5
Abstract
This paper presents the design and modelling results for 0-level MEMS packaging structure. The effect of varying the sealing height, sealing width and cavity height on the transmission line loss is considered over broadband and some guidelines provided. Transition optimizations to improve for the impedance mismatch pertaining to both BCB seal and frit seal is also considered. The optimized transition is applicable for broadband applications up to 20 GHz.
Keywords
electronics packaging; micromechanical devices; optimisation; transmission lines; 0-level MEMS packaging structure; BCB seal; cavity height; frit seal; sealing height; sealing width; transition optimizations; transmission line loss; wafer level MEMS packages; wideband transitions; Coplanar waveguides; Glass; Optimization; Power transmission lines; Seals; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Design of Advanced Packaging & Systems Symposium (EDAPS), 2010 IEEE
Conference_Location
Singapore
ISSN
2151-1225
Print_ISBN
978-1-4244-9068-4
Electronic_ISBN
2151-1225
Type
conf
DOI
10.1109/EDAPS.2010.5683016
Filename
5683016
Link To Document