DocumentCode :
1976965
Title :
Wideband transitions for wafer level MEMS packages
Author :
Lim, Ying Ying ; Yu, Aibin ; Chen, Bangtao
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol., & Res.), Singapore, Singapore
fYear :
2010
fDate :
7-9 Dec. 2010
Firstpage :
1
Lastpage :
5
Abstract :
This paper presents the design and modelling results for 0-level MEMS packaging structure. The effect of varying the sealing height, sealing width and cavity height on the transmission line loss is considered over broadband and some guidelines provided. Transition optimizations to improve for the impedance mismatch pertaining to both BCB seal and frit seal is also considered. The optimized transition is applicable for broadband applications up to 20 GHz.
Keywords :
electronics packaging; micromechanical devices; optimisation; transmission lines; 0-level MEMS packaging structure; BCB seal; cavity height; frit seal; sealing height; sealing width; transition optimizations; transmission line loss; wafer level MEMS packages; wideband transitions; Coplanar waveguides; Glass; Optimization; Power transmission lines; Seals; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Design of Advanced Packaging & Systems Symposium (EDAPS), 2010 IEEE
Conference_Location :
Singapore
ISSN :
2151-1225
Print_ISBN :
978-1-4244-9068-4
Electronic_ISBN :
2151-1225
Type :
conf
DOI :
10.1109/EDAPS.2010.5683016
Filename :
5683016
Link To Document :
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