High Performance InAs-Channel HEMT for Low Voltage Milimeter Wave Applications

Author

Hsu, Heng-Tung ; Chang, Chia-Yuan ; Chang, Edward Yi ; Kuo, Chien-I ; Miyamoto, Yasuyuki

Author_Institution

Dept. of Commun. Eng., Yuan Ze Univ., Chungli

fYear

2007

fDate

11-14 Dec. 2007

Firstpage

1

Lastpage

4

Abstract

An 80-nm InP HEMT with InAs channel and InGaAs sub-channels has been fabricated. The high current gain cutoff frequency (ft) of 350 GHz and maximum oscillation frequency (fmax) of 360 GHz were obtained at VDS = 0.7 V due to the high electron mobility in the InAs channel. DC and RF characterizations on the device have been performed and the on- sate breakdown voltage of the device was measured to be 1.75 V. A 2-stage MMIC gain block was designed using such device. A simulated gain of better than 12 dB from 54 GHz to 71 GHz with only 14 mW DC power consumption was achieved. Such high performance HEMTs demonstrated in this study shows great potential for very low power millimeter wave applications.

Keywords

III-V semiconductors; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; DC power consumption; HEMT; InAs; MMIC gain block; current gain cutoff frequency; high electron mobility transistors; low voltage millimeter wave applications; on-sate breakdown voltage; oscillation frequency; size 80 nm; Cutoff frequency; Electron mobility; Gain measurement; HEMTs; Indium gallium arsenide; Indium phosphide; Low voltage; MMICs; Performance evaluation; Radio frequency; InGaAs; InP HEMT; MMIC; gain block;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2007. APMC 2007. Asia-Pacific

Conference_Location

Bangkok

Print_ISBN

978-1-4244-0748-4

Electronic_ISBN

978-1-4244-0749-1

Type

conf

DOI

10.1109/APMC.2007.4554851

Filename

4554851