Title :
New Semiconductor Materials for Microwave Applications
Author_Institution :
Thomson-CSF/LCR, Domaine de Corbeville, 91401 ORSAY, France
Keywords :
Gallium arsenide; Impurities; Indium phosphide; Microwave devices; Organic compounds; Schottky diodes; Semiconductor materials; Silicon; Substrates; Temperature;
Conference_Titel :
Microwave Conference, 1980. 10th European
Conference_Location :
Warszawa, Poland
DOI :
10.1109/EUMA.1980.332802