Title :
Subband structure engineering for performance enhancement of Si MOSFETs
Author :
Takagi, S. ; Koga, J. ; Toriumi, A.
Author_Institution :
Adv. Semicond. Devices Res. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
This paper presents a new strategy to enhance the current drive of Si MOSFETs, utilizing a subband structure engineering. It is found that SOI MOSFETs with SOI thickness thinner than the inversion layer of bulk MOSFETs can provide higher current drive than bulk MOSFETs, because of the significant modulation of the subband structure. This performance enhancement is attributed to the increase in both the inversion-layer mobility and the inversion-layer capacitance.
Keywords :
MOSFET; band structure; capacitance; carrier mobility; elemental semiconductors; inversion layers; silicon; silicon-on-insulator; Si; Si SOI MOSFET; capacitance; current drive; inversion layer; mobility; subband structure engineering; Capacitance; Conductivity; Effective mass; Electric variables; Electrons; Laboratories; MOSFETs; Semiconductor devices; Temperature; Tensile strain;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650345
