DocumentCode
1977281
Title
Subband structure engineering for performance enhancement of Si MOSFETs
Author
Takagi, S. ; Koga, J. ; Toriumi, A.
Author_Institution
Adv. Semicond. Devices Res. Lab., Toshiba Corp., Yokohama, Japan
fYear
1997
fDate
10-10 Dec. 1997
Firstpage
219
Lastpage
222
Abstract
This paper presents a new strategy to enhance the current drive of Si MOSFETs, utilizing a subband structure engineering. It is found that SOI MOSFETs with SOI thickness thinner than the inversion layer of bulk MOSFETs can provide higher current drive than bulk MOSFETs, because of the significant modulation of the subband structure. This performance enhancement is attributed to the increase in both the inversion-layer mobility and the inversion-layer capacitance.
Keywords
MOSFET; band structure; capacitance; carrier mobility; elemental semiconductors; inversion layers; silicon; silicon-on-insulator; Si; Si SOI MOSFET; capacitance; current drive; inversion layer; mobility; subband structure engineering; Capacitance; Conductivity; Effective mass; Electric variables; Electrons; Laboratories; MOSFETs; Semiconductor devices; Temperature; Tensile strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-4100-7
Type
conf
DOI
10.1109/IEDM.1997.650345
Filename
650345
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