DocumentCode
1977572
Title
Tm Doping of III-V Semiconductors by MOVPE
Author
Weber, J. ; Scholz, F. ; Ottenwälder, D. ; Pressel, K. ; Hiller, C. ; Dörnen, A. ; Cordeddu, F.
Author_Institution
Universitat Stuttgart, Germany
fYear
1992
fDate
8-11 Jun 1992
Firstpage
156
Lastpage
157
Keywords
Atom optics; Chemical elements; Epitaxial growth; Epitaxial layers; Erbium; Gallium arsenide; III-V semiconductor materials; Lattices; Semiconductor device doping; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN
0-87942-652-7
Type
conf
DOI
10.1109/MOVPE.1992.664992
Filename
664992
Link To Document