DocumentCode
1977700
Title
Modeling the Leakage Current of Dielectric Isolation Structures in a High-Voltage Semiconductor Technology
Author
Lange, André ; Heinz, Steffen ; Erler, Klaus ; Ebest, Gunter ; Lerner, Ralf ; Eckoldt, Uwe ; Schottmann, Klaus
Author_Institution
Chemnitz Univ. of Technol., Chemnitz
fYear
2007
fDate
4-7 June 2007
Firstpage
1430
Lastpage
1434
Abstract
System-in-package integration becomes more and more important in the growing market of micromechanical sensors and actuators. The most important group of actuators are those based on the electrostatic working principle. Because of the high voltages used to drive these actuators, new methods of isolation need to be introduced. In this paper we will characterize and model the electrical behavior of such an isolation technology. A simple device model to regard parasitic effects of this isolation during the process of circuit design will be introduced.
Keywords
integrated circuit design; isolation technology; leakage currents; microactuators; microsensors; power integrated circuits; semiconductor device models; system-in-package; circuit design; dielectric isolation structures; high-voltage semiconductor technology; isolation technology; leakage current; micromechanical actuators; micromechanical sensors; system-in-package integration; Actuators; Chemical technology; Circuits; Dielectrics; Isolation technology; Leakage current; Micromechanical devices; Space technology; Spectroscopy; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics, 2007. ISIE 2007. IEEE International Symposium on
Conference_Location
Vigo
Print_ISBN
978-1-4244-0754-5
Electronic_ISBN
978-1-4244-0755-2
Type
conf
DOI
10.1109/ISIE.2007.4374811
Filename
4374811
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