Study of nonlinear photoemission effects in III-V semiconductors

Author

Tang, H. ; Alley, R.K. ; Aoyagi, H. ; Clendenin, J.E. ; Frisch, J.C. ; Garden, C.L. ; Hoyt, E.W. ; Kirby, R.E. ; Klaisner, L.A. ; Kulikov, A.V. ; Prescott, C.Y. ; Saez, P.J. ; Schultz, D.C. ; Turner, J.L. ; Woods, M. ; Zolotorev, M.S.

Author_Institution

Stanford Linear Accel. Center, Stanford Univ., CA, USA

fYear

1993

fDate

17-20 May 1993

Firstpage

3036

Abstract

Our experience at SLAC with photoemission-based polarized electron sources has shown that the charge limit is an important phenomenon that may significantly limit the performance of a photocathode for applications requiring high intensity electron beams. In the process of developing high performance photocathodes for the ongoing and future SLC high energy physics programs, we have studied the various aspects of the charge limit phenomenon. We find that the charge limit effect arises as a result of the nonlinear response of a photocathode to high intensity light illumination. The size of the charge limit not only depends on the quantum efficiency of the cathode but also depends critically on the extraction electric field. In addition, we report the observation of charge oversaturation when the intensity of the incident light becomes too large

Keywords

III-V semiconductors; photocathodes; photoemission; GaAs; III-V semiconductors; charge limit; charge oversaturation; extraction electric field; high intensity light illumination; nonlinear photoemission effects; photocathode; quantum efficiency; Cathodes; Electron beams; Electron sources; Gallium arsenide; III-V semiconductor materials; Laser beams; Monitoring; Optical polarization; Photoelectricity; Space charge;

fLanguage

English

Publisher

ieee

Conference_Titel

Particle Accelerator Conference, 1993., Proceedings of the 1993

Conference_Location

Washington, DC

Print_ISBN

0-7803-1203-1

Type

conf

DOI

10.1109/PAC.1993.309542

Filename

309542