DocumentCode :
1978049
Title :
Ge DX Center in AlGaAs Grown by Organometallic Vapor Phase Epitaxy
Author :
Lee, Wei-I ; Hummel, Steve ; Dapkus, P.Daniel
Author_Institution :
National Chiao Tung University, Department of Electrophysics, Taiwan
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
162
Lastpage :
163
Keywords :
Atmospheric measurements; Building materials; Conducting materials; Epitaxial growth; Gettering; Inductors; Molecular beam epitaxial growth; Photonic band gap; Pollution measurement; Pressure measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664995
Filename :
664995
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1978049
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