Title :
Improved Schottky Gate Characteristics for MOVPE-Grown GaAs MESFETs
Author :
Tischler, M.A. ; La Tulipe, D.C. ; Kuech, T.F. ; Magerlein, J.H. ; Hovel, H.J.
Author_Institution :
IBM T.J. Watson Research Center, Yorktown Heights, NY
Keywords :
Clamps; Degradation; Doping; Gallium arsenide; Ion implantation; Leakage current; MESFETs; Schottky diodes; Substrates; Voltage;
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
DOI :
10.1109/MOVPE.1992.664998
