DocumentCode

1978098

Title

Improved Schottky Gate Characteristics for MOVPE-Grown GaAs MESFETs

Author

Tischler, M.A. ; La Tulipe, D.C. ; Kuech, T.F. ; Magerlein, J.H. ; Hovel, H.J.

Author_Institution

IBM T.J. Watson Research Center, Yorktown Heights, NY

fYear

1992

fDate

8-11 Jun 1992

Firstpage

167

Lastpage

168

Keywords

Clamps; Degradation; Doping; Gallium arsenide; Ion implantation; Leakage current; MESFETs; Schottky diodes; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference

Print_ISBN

0-87942-652-7

Type

conf

DOI

10.1109/MOVPE.1992.664998

Filename

664998