• DocumentCode
    1978126
  • Title

    Carbon Doped AlxGa1-xAs by OMVPE: Doping Properties, Oxygen and Hydrogen Incorporation, and Device Applications

  • Author

    Hobson, W.S. ; Pearton, S.J. ; Ren, F. ; Kozuch, D.M. ; Stavola, M.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, New Jersey
  • fYear
    1992
  • fDate
    8-11 Jun 1992
  • Firstpage
    169
  • Lastpage
    170
  • Keywords
    Capacitance measurement; Doping; Epitaxial growth; Epitaxial layers; Gallium arsenide; Heterojunction bipolar transistors; Hydrogen; Infrared detectors; Mass spectroscopy; Oxygen;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
  • Print_ISBN
    0-87942-652-7
  • Type

    conf

  • DOI
    10.1109/MOVPE.1992.664999
  • Filename
    664999
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1978126