Title :
Mobility and strain effects for <100> and <110> oriented silicon and SiGe transistor channels
Author :
Flachowsky, S. ; Herrmann, Thomas ; Höntschel, J. ; Illgen, R. ; Ong, Shiang Yang ; Wiatr, M. ; Baldauf, T. ; Klix, W. ; Stenzel, R.
Author_Institution :
GLOBALFOUNDRIES Dresden Module One LLC & Co. KG, Dresden, Germany
Abstract :
The impact of compressive and tensile stress on CMOS performance is studied for <;100>; and <;110>; oriented silicon and SiGe channels. The <;110>; channel direction is found to be more stress sensitive whereas the <;100>; oriented transistor has a higher initial hole mobility. These results recommend to use the <;110>; channel orientation for high performance application due to the high drive current gain and <;100>; channel orientation for low power applications where no stress elements are included to ease the overall process complexity and to decrease costs.
Keywords :
CMOS integrated circuits; Ge-Si alloys; field effect transistors; hole mobility; transistor circuits; CMOS performance; SiGe; compressive stress; hole mobility; mobility effects; strain effects; tensile stress; transistor channels; CMOS; SiGe; channel orientation; strain; stress;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-0191-6
Electronic_ISBN :
978-1-4673-0190-9
DOI :
10.1109/ULIS.2012.6193343
