Mobility and strain effects for <100> and <110> oriented silicon and SiGe transistor channels

Author

Flachowsky, S. ; Herrmann, Thomas ; Höntschel, J. ; Illgen, R. ; Ong, Shiang Yang ; Wiatr, M. ; Baldauf, T. ; Klix, W. ; Stenzel, R.

Author_Institution

GLOBALFOUNDRIES Dresden Module One LLC & Co. KG, Dresden, Germany

fYear

2012

fDate

6-7 March 2012

Firstpage

5

Lastpage

8

Abstract

The impact of compressive and tensile stress on CMOS performance is studied for <;100>; and <;110>; oriented silicon and SiGe channels. The <;110>; channel direction is found to be more stress sensitive whereas the <;100>; oriented transistor has a higher initial hole mobility. These results recommend to use the <;110>; channel orientation for high performance application due to the high drive current gain and <;100>; channel orientation for low power applications where no stress elements are included to ease the overall process complexity and to decrease costs.

Keywords

CMOS integrated circuits; Ge-Si alloys; field effect transistors; hole mobility; transistor circuits; CMOS performance; SiGe; compressive stress; hole mobility; mobility effects; strain effects; tensile stress; transistor channels; CMOS; SiGe; channel orientation; strain; stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on

Conference_Location

Grenoble

Print_ISBN

978-1-4673-0191-6

Electronic_ISBN

978-1-4673-0190-9

Type

conf

DOI

10.1109/ULIS.2012.6193343

Filename

6193343