Title :
Photoluminescence study of bare freestanding gallium arsenide nanowires grown by vapor-liquid-solid method
Author :
Zhang, Guoqiang ; Tateno, Kouta ; Sanada, Haruki ; Tawara, Takehiko ; Gotoh, Hideki ; Nakano, Hidetoshi
Author_Institution :
NTT Basic Res. Labs., NTT Corp., Atsugi, Japan
Abstract :
We studied size-dependent optical properties of bare freestanding gallium arsenide nanowires grown by vapor-liquid-solid method. In contrast to blueshift of luminescence peaks usually induced by band filling, redshift was observed for small quantum wires.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; nanotechnology; nanowires; photoluminescence; red shift; semiconductor quantum wires; GaAs; bare freestanding nanowires; photoluminescence; redshift; size-dependent optical properties; vapor-liquid-solid method; Biomedical optical imaging; Filling; Gallium arsenide; Gold; Indium phosphide; Luminescence; Nanowires; Photoluminescence; Transmission electron microscopy; Wires; GaAs; nanowire; photoluminescence; quantum wire;
Conference_Titel :
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-3829-7
Electronic_ISBN :
978-1-4244-3830-3
DOI :
10.1109/CLEOPR.2009.5292497
