Title :
Origins of the short channel effects increase in III-V nMOSFET technologies
Author :
Dutta, T. ; Rafhay, Q. ; Clerc, R. ; Lacord, J. ; Monfray, S. ; Pananakakis, G. ; Boeuf, F. ; Ghibaudo, G.
Author_Institution :
IMEP-LAHC, Grenoble, France
Abstract :
This paper investigates the different mechanisms responsible for the increase of short channel effects in III-V MOSFETs. As expected, the first origin of this increase is due to the higher dielectric constant of III-V semiconductors. The second is due to their small density of states, which induces larger DIBL, but only in the strong inversion regime, due to larger dark space. Finally, barrier layers, used in the Quantum Well FET architecture, are shown to cause additional DIBL increase.
Keywords :
III-V semiconductors; MOSFET; permittivity; quantum well devices; semiconductor quantum wells; DIBL; III-V nMOSFET technology; III-V semiconductor; barrier layer; dielectric constant; quantum well FET architecture; short channel effect; state density; Dielectric constant; Effective mass; Logic gates; MOSFETs; Potential well; Silicon; Dark Space; III-V MOSFETs; QWFET architectures; Short Channel Effects; Strong inversion DIBL;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-0191-6
Electronic_ISBN :
978-1-4673-0190-9
DOI :
10.1109/ULIS.2012.6193348
