DocumentCode
1978323
Title
Properties of P on N Heterojunctions Made with MCT Grown by MOCVD
Author
Oguz, S. ; Lee, D.L. ; Olson, R.J., Jr. ; Kreismanis, V.G. ; Elliot, J. ; Sullivan, E.
Author_Institution
Raytheon Research Division, MA
fYear
1992
fDate
8-11 Jun 1992
Firstpage
182
Lastpage
182
Keywords
Charge carrier lifetime; Chemical vapor deposition; Doping; Epitaxial layers; Heterojunctions; Inductors; MOCVD; Photonic band gap; Springs; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN
0-87942-652-7
Type
conf
DOI
10.1109/MOVPE.1992.665007
Filename
665007
Link To Document