DocumentCode :
1978334
Title :
Atomic Layer Epitaxy of CdTe on GaAs by Organometallic Vapor Phase Epitaxy
Author :
Wang, W.S. ; Ehsani, H.E. ; Bhat, I.B.
Author_Institution :
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, NY
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
183
Lastpage :
183
Keywords :
Atomic layer deposition; Epitaxial growth; Gallium arsenide; Inductors; Lattices; Substrates; Surface morphology; Systems engineering and theory; Tellurium; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.665008
Filename :
665008
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1978334
بازگشت