Title :
Comparison between low and high read bias in FB-RAM on UTBOX FDSOI devices
Author :
Almeida, L.M. ; Aoulaiche, M. ; Sasaki, K.R.A. ; Nicoletti, T. ; de Andrade, M.G.C. ; Collaert, N. ; Simoen, E. ; Claeys, C. ; Martino, J.A. ; Jurczak, M.
Author_Institution :
LSI/PSI, Univ. of Sao Paulo, Sao Paulo, Brazil
Abstract :
This paper investigates the drain read bias impact on the FB-BRAM performance of Ultra Thin Buried Oxide (UTBOX) Fully Depleted Silicon On Insulator (FDSOI) devices. Both simulations and experimental results are used. Two read regimes are clearly observed. In the read regime at higher drain voltage, impact ionization is occurring and this result in a higher sense margin and a lower retention time compared to the low drain voltage read regime.
Keywords :
impact ionisation; silicon-on-insulator; FB-BRAM performance; UTBOX FDSOI device; drain read bias impact; drain voltage read regime; fully depleted silicon on insulator device; impact ionization; ultra thin buried oxide; Current measurement; Impact ionization; Junctions; Latches; Logic gates; Random access memory; Semiconductor process modeling; FBRAM; Retention Time; Sense Margin Current; UTBOX;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-0191-6
Electronic_ISBN :
978-1-4673-0190-9
DOI :
10.1109/ULIS.2012.6193357
